2024年11月18-21日，第十届国际第三代半导体论坛（IFWS2024）&第二十一届中国国际半导体照明论坛（SSLCHINA2024）、先进半导体技术应用创新展（CASTAS）将在苏州国际博览中心G馆举办。
远山半导体将携多款产品亮相此次展会。值此，诚挚邀请第三代半导体产业同仁共聚论坛，莅临C03号展位参观交流、洽谈合作。
公司简介
远山半导体是一家专注于第三代半导体氮化镓材料及功率器件研发与生产的高新技术企业。公司拥有一支来自于中国、日本、美国的国际化核心技术团队，股东方之一的日本PowDec株式会社是一家行业内知名的氮化镓技术研发企业，在氮化镓外延材料与芯片领域掌握全球领先的核心技术与生产工艺。
Hillsemi Technologies Inc is a high-tech company focusing on the R&D and production of the third generation semiconductor GaN materials and power devices. Our company has an international core technology team from China, Japan and the United States. One of our main shareholders, PowDec Co., Ltd., is a well-known GaN technology R&D enterprise in the industry. It has mastered the world's leading core technology and production process in the field of GaN epitaxial materials and chips.
远山采用“外延材料+芯片制造”的发展模式，具备完整的核心技术闭环与量产能力。与行业内大多数企业不同，远山公司主打面向新能源行业应用的中高功率工业级氮化镓功率器件，产品涵盖800V、1200V、1700V、3300V等多种规格的蓝宝石基氮化镓外延材料与功率器件，产品具备高耐压与高频率“两者兼得”的特点，多项性能指标处于行业内领先水平，主要应用于车载充电器、双向DC-DC、微型逆变器、便携储能、V2G、硬开关等领域。在市场与客户方面，公司已与某国际一线车企签订长期供货协议，同时与国内多个新能源领域客户建立合作关系并实现批量出货。
Hillsemi adopts the development mode of "epitaxial material + chip manufacturing", and has complete core technology closed-loop and mass production capacity. Different from most enterprises in the industry, Hillsemi focuses on medium and high voltage industrial GaN power devices for new energy industry applications. Our products cover sapphire based GaN epitaxial materials and power devices of 800V, 1200V, 1700V, 3300V and other specifications, with the characteristics of both "high voltage resistance and high frequency". The specifications of Hillsemi’s power devices are at the leading level in the industry, mainly used in vehicle chargers, two-way DC-DC, micro inverters, portable energy storage, V2G, hard switches and other fields. In terms of market and customers, the company has signed a long-term supply agreement with an international first-line car manufacture, and has established cooperation relations with many domestic customers in the new energy field.
成立至今，远山已握有40余项国内外专利所构建的“护城河”及多款氮化镓功率器件产品，展望未来，公司将以独特的蓝宝石基氮化镓外延材料为基础，结合独有的PSJ高耐压芯片工艺，持续推出多品类中高功率氮化镓功率器件产品，努力助推氮化镓技术从传统的低功率消费级应用拓展到中高功率新能源行业应用，实现氮化镓产品在工业级全域市场的广泛应用。
Since establishment, Hillsemi has held more than 40 domestic and foreign patents to build a "moat" and a variety of gallium nitride power device products. Looking forward to the future, our company will continue to launch a variety of medium and high power GaN power device products based on the unique sapphire based GaN epitaxial materials, combined with the unique PSJ high voltage withstand chip process, and strive to promote the expansion of GaN technology from traditional low voltage consumer applications to high voltage new industrial applications, so as to achieve the wide application of GaN products in the industrial level global market.
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